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1 词典释义:
mos
时间: 2025-09-01 08:56:22
英 [məʊz]
美 [moʊz]

abbr. 金属氧化物半导体(Metal Oxide Semiconductor的缩写);管理操作系统(Management Operating System的缩写);军职专长\n(military occupational specialty的缩写)

双语例句
  • High voltage, photo MOS relay.

    高电压,照片MOS继电器。

  • It is possible to do DC analysis or transient analysis for MOS IC.

    用它可进行MOS集成电路的直流分析和瞬态分析。

  • V-MOS inverter high running frequency, high efficiency, low noise.

    管逆变工作频率高,高效,低噪声。

  • Thus, the radiation response of MOS device can be significantly changed.

    这样,已能有效地改变MOS器件的抗辐照性能。

  • Ketwol told her she could always come back when his ship was in Mos Eisley.

    凯特·沃尔告诉她,只要自己的飞船在莫斯埃斯利,她就能随时回来。

  • Ackmena was the night-time bartender of the Mos Eisley Cantina on Tatooine.

    阿克梅娜是塔图因星球莫斯艾斯利酒馆的夜班服务员。

  • It has universal significance for general statistical forecasts and MOS forecasts.

    这对一般统计与MOS天气预报具有普遍意义。

  • But in mos tcompanies these days, a signed statement from the past employee is needed.

    现今在大多数的公司里,都会和雇员签署声明。

  • Heat dissipation in MOS gate is in direct Proportion to its output switching activity.

    MOS逻辑门电路的功率损耗与其门电路的输出翻转成正比。

  • Doda was born on a transport shuttle and raised in the port city of Mos Eisley on Tatooine.

    多达在一艘运输船上出生,在塔图因的港口城市莫斯·艾斯利长大。

  • A differential equation, which describes the transients of pulsed MOS capacitors, is derived.

    本文给出了描写脉冲MOS电容器的瞬态特性的微分方程。

  • A new method of measuring generation lifetime from linear-sweep MOS Ct transient was suggested.

    提出了MOS电容线性电压扫描法产生寿命测量的新方法。

  • Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.

    采用LDD结构:3。在允许的范围内,适当增加器件的沟道长度。

  • The filter features high cut-off frequency and the fabrication process is compatible with MOS process.

    该滤波器具有高截止频率、与MOS工艺兼容、便于单片集成等优点。

  • Evazan returned to hide out in Mos Eisley, eventually opening up a shop called the Cutting Edge Clinic.

    埃瓦赞又躲回莫斯埃斯利,终于在那里开了一家叫“尖端诊所”的医疗店。

  • A new structure of power MOS-gated thyristor named Trench MOS Controlled thyristor (TMCT) is presented.

    报道了一种新结构的功率栅控晶闸管,称其为槽栅MOS控制的晶闸管(TMCT)。

  • PH of the intestinal was affected by the dietary MOS, but the effect of MOS was not remarkably (P>0.05).

    血液中钾、钠、镁、氯的含量随甘露寡糖添加量升高有所上升,但是效果不显著(P>0.05)。

  • An unified method for converting MOS circuit level description into logic level description is presented.

    本文介绍了一种将MOS电路级描述转换成逻辑级描述的统一方法。

  • He barely escaped alive, having his arm cleaved off by the Jedi Obi-Wan Kenobi in the Mos Eisley Cantina.

    他在莫斯·艾斯利小酒馆被欧比—万·克诺比砍下一条胳膊,但侥幸逃生。

  • The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing.

    本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。

  • The other three children became the property of the Hutt, and he kept them in his town house in Mos Eisley.

    另外三个孩子变成了赫特人的财产,被关进赫特人在莫斯埃斯利的城内住宅。

  • By utilizing forward body bias technique, the threshold of MOS has been changed for operating at low voltage.

    通过采用正体偏置技术,改变器件工作阈值达到低电压工作的目标。

  • A method is presented for measuring the minority recombination Lifetime in MOS fet's by charge pumping effect.

    本文介绍了应用电荷抽取效应测量MOS晶体管中少子复合寿命的方法。

  • The investigated results are very important for the research and fabrication of the MOS structure gas sensors.

    研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。

  • A new method of measuring the electromotive force of reversible cells using MOS intergrated circuit is presented.

    本文介绍一种应用MOS集成电路测量可逆电池电动势的新方法。

  • The Weequay design was resurrected for Episode I, with a number of new Weequays visible in the Mos Espa Grand Arena.

    在《第一集》里,威奎人的设计重新被起用,可以在莫斯·艾斯帕竞技场上看到许多新的威奎人。

  • The design of Vos stems from a background extra barely glimpsed in Mos Espa in Star Wars: Episode I The Phantom Menace.

    沃斯的设计来源于《星战i:幽灵的威胁》中莫斯·艾斯·帕里仅仅一闪而过的一个背景角色。

  • The character Han Solo dressed like an archetypal gunslinger, and the Mos Eisley Cantina is much like an old west saloon.

    韩·索洛这个角色的装束像一个典型的赏金杀手,而摩斯·艾斯雷酒吧也很像一个老式西部沙龙。

  • The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.

    使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。