The device could be integrated monolithically and planarly with GaAs FET.

这种器件可与FET实现平面集成。

GaAs IC CAD system which developed on SUN workstation is introduced in this paper.

介绍了一个在SUN工作站上自主开发的砷化镓集成电路CAD系统。

Ideal for use for correcting gain shift from temperature fluctuations of GaAs amplifiers.

理想用于纠正从中砷化镓放大器的使用温度波动变化。

A multi mode interference wavelength division multiplexer in GaAs has been studied in this paper.

本文研究了一种多模干涉型光波分复用器。

An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.

报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。

To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.

为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。

The design technology and developed results for C band GaAs MMIC 6 bit digital phase shifter are described.

叙述了一种采用单片集成方式实现的C波段6位数字移相器的设计技术和研制结果。

The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.

光电反馈线路采用普通的砷化镓光电导开关，具有结构简单、性能可靠的优点。

In this paper, the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

Being a core part of laser beam system, the output coupling mirror are often made of ZnSe, Ge, GaAs as base materials.

输出耦合镜作为激光光路系统的核心部件，通常由硒化锌、锗、砷化镓等基材制成。

This paper discusses a switching model of GaAs MESFET. It is suitable for MMIC design with broad frequency characteristic.

提出了一种MESFET开关的模型——附加栅控开关模型，适用于MMIC电路的设计，具有很好的宽带微波特性。

A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers (VCSELs).

采用一种新的工艺方法提高了垂直腔面发射激光器的输出功率。

The high frequency modulation characteristics of GaAs-GaAlAs DH LBDs are analyzed and the results (data and curves) presented.

分析了器件的两种高频调制特性，给出了测量结果——数据和曲线。

A new kind of generator rotator temperature measuring system is designed based on optic absorption theory of GaAs semiconductor.

根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。

On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.

在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。

A new kind of generator rotor temperature measuring system is designed based on optical absorption behavior of GaAs semiconductor.

根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。

At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.

目前射频芯片和高速光纤通信芯片绝大多数都是采用高速双极性硅工艺和砷化镓工艺。

GaAs infrared searchlight with novel structure of a coaxial double reflective bowls was used in 1985 for police night vision device.

一个具有同轴双反光碗的新型结构的砷化镓红外探照灯在1985年正式使用于警用红外夜视仪中。

The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs l...

结果表明，低温外延是制备较高质量外延层的一种可取方法。

The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.

结果表明，低温外延是制备较高质量外延层的一种可取方法。

Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.

用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。

The principle of GaAs photoemission polarized electrons and a very simple kind of GaAs polarized electron source are introduced in this paper.

本文介绍自旋极化电子产生的原理及一种设计简洁、结构简单的极化电子源装置。

In this paper a laser way for obtaining "whisker" of semiconductor GaAs is presented and the prospect of using new material is simply described.

本文报道了获取半导体砷化镓“晶须”的激光方法，并简述了新材料的应用前景。

To resolve the problem of high sensitivity of the element of low inner resistance, we design the unsymmetric cross structure for the GaAs Hall sensor.

针对器件低内阻下的高灵敏度这一器件特性上的难题，在砷化镓霍尔传感器设计中采用非对称十字形结构。

The development on quantitative analysis of si in GaAs by SIMS is reviewed critically. Therelative sensitivity factor (RSF) method is discussed in detail.

评述砷化镓中硅SIMS定量分析的进展，讨论了相对灵敏度因子法。

This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.

本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。

Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.

富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。

The paper describes a CAD tool, it can perform GaAs device simulation, device parameter abstraction, circuit simulation, layout edition and PG tape generation.

介绍了一套砷化镓专用电路CAD软件，它可完成砷化镓器件模拟、器件模型参数提取、电路模拟、版图编辑、PG带生成的全过程设计。

After etching the surface of GaAs chip could be smooth and the isolation grooves have little edges, which can completely meet the requirements of device design.

腐蚀后芯片表面平整度、侧蚀等指标初步达到器件设计的要求。

A microwave monolithic fully integrated broadband low noise feedback amplifier with high performances is developed and fabricated on 3" GaAs wafers successfully."

一种性能优异的全单片宽带低噪声反馈放大器已研制成功。